| PART |
Description |
Maker |
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| IRGBC20 IRGBC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|
| IRGBC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=12A)
|
IRF[International Rectifier]
|
| IRGPF30F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
|
IRF[International Rectifier]
|
| IRGPC30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| IRGPC50S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=41A)
|
IRF[International Rectifier]
|
| IRGBC30M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRGBF30F IRGBF30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)
|
IRF[International Rectifier]
|
| IRGPF50F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)
|
International Rectifier
IRF
|
| IRGPH50M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V @Vge=15V Ic=23A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)
|
http://
IRF[International Rectifier]
|
| IRG4PC20UPBF |
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A )
|
International Rectifier
|
